^e.mi-dondactoi {piodueti, -una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFM250 power mosfet thru-hole (to-254aa) features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight absolute maximum ratings ld@vgs = 10v,tc = 250c id@vgs = iov,tc = iooc idm pd @ tc = 25c vgs eas iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current 1 max. power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy (?) avalanche current ,1; repetitive avalanche energy i peak diode recovery dv/dt nj semi-conductors is believed to be both accurate and reliable at the time or'going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. \ semi-conductors encourages customers to verity that datasheets are current before placing orders.
IRFM250 electrical characteristics @tj = 25c (unless otherwise specified) bvdss abvdss/atj rds(on) vgs(th) 9fs idss igss igss qa. qgs qgd td(on) tr td(off) tf ls + ld ciss coss crss cdc parameter drain-to-source breakdown voltage temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charge gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance drain-to-case capacitance min 200 ? ? ? 2.0 90 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? typ ? 0.28 ? ? ? ? ? ? ? ? ? ? ? ? ? ? 6.8 3500 700 110 12 max ? ? 0.100 0.105 4.0 ? 25 250 100 -100 115 22 60 35 190 170 130 ? ? ? ? ? units v v/c a v sm ua na nc ns nh pf test conditions vgs = ov, id = 1 .0ma reference to 25c, id = 1.0ma vgs = 10v, id = 17a ~ vgs = 10v, lo = 27.4a vds = vgs. id = 250|ja vds> 15v, ids = 17a? vds= 160v,vgs=ov vds = 160v, vgs = ov, tj = 125c vgs = 2ov vgs = -2ov vgs=10v, lo = 27.4a vds = ioov vdd = 5ov id = 44a, vgs=10v, rc = 2.35ii measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in . from package vgs = ov, vds = 2sv f = 1.0mhz source-drain diode ratings and characteristics is ism vsd trr qrr ton parameter continuous source current pulse source current (body (body diode) diode) x diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? ? typ ? ? ? ? ? max 27.4 110 1.9 950 9.0 units a v ns mc test conditions tj = 25c, is = 27.4a, vgs = ov ? tj = 25c, if = 27.4a, di/dt < 100a/u.s vdd ^ sov ? intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l_s + ld. thermal resistance rthjc rthjcs rthja parameter junction-to-case case-to-sink junction-to-ambient min ? ? ? typ ? 0.21 max 0.83 ? 48 units c/w test conditions typical socket mount
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